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Invited Lecture

Metal–insulator transition in vanadium oxides films and its applications

Wednesday (07.06.2017)
22:20 - 23:00 Förde II + III
Part of:
12:20 Invited Lecture Similarities and differences between magnetic hysteresis and hysteresis in phase transformations 0 Richard James
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17:40 Invited Lecture Probing the Structure and Dynamic Behaviors of Ferroelectrics by Electron Microscopy with Atomic Resolution in Real Time 0 Prof. Xiaoqing Pan
18:20 Invited Lecture Magnetoelectric Composites for Energy Harvesting 1 Dr. Shashank Priya
19:40 Invited Lecture Declamping in Lead Magnesium Niobate – Lead Titanate Films 1 Prof. Susan Trolier-McKinstry
20:20 Invited Lecture Integrated Magnetics and Multiferroics for Compact and Power Efficient Sensing, Power, RF, Microwave and mm-Wave Electronics 0 Prof. Nian X. Sun
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21:40 Invited Lecture Magnetoelectric Composites: from Sensors to Sensor Systems 0 Prof. Dr.-Ing. Gerhard Schmidt
22:20 Invited Lecture Metal–insulator transition in vanadium oxides films and its applications 1 Dr. Keisuke Shibuya
00:20 Invited Lecture In operando photoemission spectroscopy of PMN-PT interfaces 0 Prof. Dr. Kai Rossnagel
08:30 Invited Lecture Titanium-Tantalum High Temperature Shape Memory Spring Actuators 1 Prof. Dr. Gunther Eggeler
09:10 Invited Lecture Vortex-antivortex topological structures in multiferroic tunnel junctions 1 Dr. Ana Sanchez
09:50 Invited Lecture Artificial Ferroic Systems 1 Prof. Laura Heyderman
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Session Chair

Topic Invited Lecture:
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Transition-metal oxides exhibit various potentially useful electronic properties. Among them, vanadium dioxide (VO2) is of great interest due to the potential application of its prominent properties. It undergoes a metal–insulator transition (MIT) accompanied by a structural change from high-temperature tetragonal to low-temperature monoclinic phases above room temperature. Dimerization of V ions to form spin singlet state opens the gap in the insulating phase, which causes a sharp resistivity jump at the transition temperature. Therefore, numbers of studies have been performed to realize switching devices or sensors operating at room temperature.

I will present the effects of epitaxial strain on MIT in VO2 films on TiO2, MgF2, and Al2O3 substrates. The transition temperature is systematically changed due to the variation of in-plane lattice constants of VO2 films. The transition temperature is also controlled by impurity doping and external stimuli. I will show the phase stability of VO2 on Si substrate for integrating this material with Si-based devices. If time permits, I will also report our recent studies on VO2-based device application.


Dr. Keisuke Shibuya
National Institute of Advanced Industrial Science and Technology AIST