Integrated Magnetics and Multiferroics for Compact and Power Efficient Sensing, Power, RF, Microwave and mm-Wave ElectronicsWednesday (07.06.2017) 20:20 - 21:00 Förde II + III Part of:
The coexistence of electric polarization and magnetization in multiferroic materials provides great opportunities for realizing magnetoelectric coupling, including electric field control of magnetism, or vice versa, through a strain mediated magnetoelectric coupling in layered magnetic/ferroelectric multiferroic heterostructures [1-8]. Strong magnetoelectric coupling has been the enabling factor for different multiferroic devices, which however has been elusive, particularly at RF/microwave frequencies. In this presentation, I will cover the most recent progress on new integrated multiferroic devices for sensing, memory, RF and microwave electronics. Specifically, we will introduce magnetoelectric multiferroic materials, and their applications in different devices, including: (1) ultra-sensitive magnetometers based on RF NEMS magnetoelectric sensors with picoTesla sensitivity for DC and AC magnetic fields, which are the best room temperature nano-scale magnetometers and can be used for magnetoencephalography; (2) novel ultra-compact multiferroic antennas with f200µm × 0.8µm or l0/600 in size, -18dBi gain, ~0.2% bandwidth, self-biased operation and 1~2% voltage tunable operation frequency which can be used for embedded or wearable antennas; and (3) novel GHz magnetic and multiferroic inductors with a wide operation frequency range of 0.3~3GHz, and a high quality factor of close to 20, and a voltage tunable inductance of 50%~150%. At the same time, I will also demonstrate other voltage tunable multiferroic devices, including tunable isolating bandpass filters, tunable bandstop filters, tunable phase shifters, magnetoelectric random access memory, etc. These novel integrated multiferroic devices show great promise for applications in compact, lightweight and power efficient sensing, power, RF, microwave and mm-wave integrated electronics.Reference: 1. N.X. Sun and G. Srinivasan, SPIN, 02, 1240004 (2012); 2. J. Lou, et al., Advanced Materials, 21, 4711 (2009); 3. . J. Lou, et al. Appl. Phys. Lett. 94, 112508 (2009); 4. M. Liu, et al. Advanced Functional Materials, 21, 2593 (2011); 5. T. Nan, et al. Scientific Reports, 3, 1985 (2013); 6. M. Liu, et al. Advanced Materials, 25, 1435 (2013); 7. M. Liu, et al. Advanced Functional Materials, 19, 1826 (2009); 8. Ziyao Zhou, et al. Nature Communications, 6, 6082 (2015).