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Invited Lecture

Declamping in Lead Magnesium Niobate – Lead Titanate Films

Wednesday (07.06.2017)
19:40 - 20:20 Förde II + III
Part of:
12:20 Invited Lecture Similarities and differences between magnetic hysteresis and hysteresis in phase transformations 0 Richard James
13:00 Invited Lecture Discovery and Design of Multifunctional Materials using Combinatorial and High-Throughput Experimentation 1 Prof. Dr. Alfred Ludwig
15:10 Invited Lecture Tuning Mechanical Properties of Spider Cuticle by its Composition and by Structural Gradients 0 Dr. Yael Politi
15:50 Invited Lecture Surfaces and Gels for controlling Calcium Phosphate Deposition 0 Prof. Dr. Andreas Taubert
17:40 Invited Lecture Probing the Structure and Dynamic Behaviors of Ferroelectrics by Electron Microscopy with Atomic Resolution in Real Time 0 Prof. Xiaoqing Pan
18:20 Invited Lecture Magnetoelectric Composites for Energy Harvesting 1 Robert E. Hord, Jr. Professor Shashank Priya
19:40 Invited Lecture Declamping in Lead Magnesium Niobate – Lead Titanate Films 1 Prof. Susan Trolier-McKinstry
20:20 Invited Lecture Integrated Magnetics and Multiferroics for Compact and Power Efficient Sensing, Power, RF, Microwave and mm-Wave Electronics 0 Prof. Nian X. Sun
21:00 Invited Lecture From Maxwell’s displacement current to nanogenerator driven self-powered systems and blue energy 0 Prof. Zhong Lin Wang
21:40 Invited Lecture Magnetoelectric Composites: from Sensors to Sensor Systems 0 Prof. Dr.-Ing. Gerhard Schmidt
22:20 Invited Lecture Metal–insulator transition in vanadium oxides films and its applications 1 Dr. Keisuke Shibuya
00:20 Invited Lecture In operando photoemission spectroscopy of PMN-PT interfaces 0 Prof. Dr. Kai Rossnagel
08:30 Invited Lecture Titanium-Tantalum High Temperature Shape Memory Spring Actuators 1 Prof. Dr. Gunther Eggeler
09:10 Invited Lecture Vortex-antivortex topological structures in multiferroic tunnel junctions 1 Dr. Ana Sanchez
09:50 Invited Lecture Artificial Ferroic Systems 1 Prof. Laura Heyderman
17:40 Invited Lecture Biomimicry at the molecular level: Molecularly imprinted polymers as synthetic antibody mimics 0 Karsten Haupt
Session Chair
Topic Invited Lecture:
Belongs to:

R. Keech,1 L. Ye,2 J.L. Bosse,2 G. Esteves,3 J, Guerrier,3 J. L. Jones,3 M. A. Kuroda,4 B.D. Huey,2 and S. Trolier-McKinstry1

1Dept. Materials Sci. & Eng., and Materials Res. Inst., University Park, PA, USA

2 Dept. Materials Sci. & Eng., University of Connecticut, Storrs, CT, USA

3 Dept. Materials Sci. & Eng., North Carolina State University, Raleigh, NC, USA

3 Dept. Physics, Auburn University, Auburn, AL, USA

Piezoelectronic Transistors provide a potential CMOS replacement, but necessitate finely patterned, thin piezoelectric films with excellent piezoelectric response. This paper will discuss growth and characterization of both epitaxial and highly {001}-oriented lead magnesium niobate – lead titanate (PMN-PT) thin films for this application. It was found that both film types exhibited similar, thickness-independent high-field ?r of ~300 with highly crystalline electrode/dielectric interfaces. Irreversible domain wall motion is the major contributor to the overall dielectric response and its thickness dependence. In clamped epitaxial films the irreversible Rayleigh coefficients reduced 85% upon decreasing thickness from 350 to 100 nm. The effective interfacial layers are found to contribute to the measured thickness dependence in d33,f measured by X-ray diffraction. High field piezoelectric characterization revealed a field-induced rhombohedral to tetragonal phase transition in epitaxial films. Using optical and electron beam lithography combined with reactive ion etching, the PMN-PT films were systematically patterned down to lateral feature sizes of 200 nm in spatial scale with nearly vertical sidewalls. Upon lateral scaling, there was an increase in both small and large signal dielectric properties, including a doubling of the relative permittivity in structures with width-to-thickness aspect ratios of 0.7.  The longitudinal piezoelectric coefficient, d33,f, was interrogated as a function of position across the patterned structures by finite element modeling, piezoresponse force microscopy, and nanoprobe synchrotron X-ray diffraction. It was found that d33,f increased from the clamped value of 40-50 pm/V to ~160 pm/V at the free sidewall under 200 kV/cm excitation. The sidewalls partially declamped the piezoelectric response 500-600 nm into the patterned structure, raising the piezoelectric response at the center of features with lateral dimensions less than 1 ?m (3:1 width to thickness aspect ratio). The normalized data from all three characterization techniques are in excellent agreement.



Prof. Susan Trolier-McKinstry
The Pennsylvania State University